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UM5K1N
Transistors
Electrical characteristics (Ta=25 ° C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-stage
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I GSS
V (BR)DSS
I DSS
V GS(th)
R DS(on)
R DS(on)
Y fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Min.
?
30
?
0.8
?
?
20
?
?
?
?
?
?
?
Typ.
?
?
?
?
5
7
?
13
9
4
15
35
80
80
Max.
± 1
?
1
1.5
8
13
?
?
?
?
?
?
?
?
Unit
μ A
V
μ A
V
?
?
mS
pF
pF
pF
ns
ns
ns
ns
Test Conditions
V GS =±20V, V DS =0V
I D =10 μ A, V GS =0V
V DS =30V, V GS =0V
V DS =3V, I D =100 μ A
I D =10mA, V GS =4V
I D =1mA, V GS =2.5V
I D =10mA, V DS =3V
V DS =5V
V GS =0V
f=1MHz
I D =10mA, V DD 5V
V GS =5V
R L =500 ?
R G =10 ?
Electrical characteristic curves
0.15
4V
3.5V
3V
Ta=25?C
Pulsed
200m
100m
50m
V DS =3V
Pulsed
2
1.5
V DS =3V
I D =0.1mA
Pulsed
0.1
20m
10m
2.5V
5m
1
0.05
2V
2m
1m
0.5m
Ta=125?C
75?C
25?C
? 25?C
0.5
V GS =1.5V
0.2m
? 50 ? 25
0
0
1
2
3
4
5
0.1m
0
1
2
3
4
0
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.1 Typical output characteristics
GATE-SOURCE VOLTAGE : V GS (V)
Fig.2 Typical transfer characteristics
CHANNEL TEMPERATURE : Tch (?C)
Fig.3 Gate threshold voltage vs.
channel temperature
50
20
10
Ta=125?C
75?C
25?C
? 25?C
V GS =4V
Pulsed
50
20
10
Ta=125?C
75?C
25?C
? 25?C
V GS =2.5V
Pulsed
15
10
Ta=25?C
Pulsed
5
5
2
1
2
1
5
I D =0.1A
I D =0.05A
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
0
5
10
15
20
DRAIN CURRENT : I D (A)
Fig.4 Static drain-source on-state
resistance vs. drain current ( I )
DRAIN CURRENT : I D (A)
Fig.5 Static drain-source on-state
resistance vs. drain current ( II )
GATE-SOURCE VOLTAGE : V GS (V)
Fig.6 Static drain-source on-state
resistance vs.
gate-source voltage
Rev.A
2/3
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